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UNISONIC TECHNOLOGIES CO., LTD 2N60 2 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 1 Power MOSFET 1 TO-220 1 TO-220F TO-220F1 TO-262 FEATURES * RDS(ON) = 5@VGS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (CRSS = typical 5.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 TO-251 1 TO-252 1 1 TO-126 TO-251L SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2N60L-X-TA3-T 2N60G-x-TA3-T 2N60L-x-TF1-T 2N60G-x-TF1-T 2N60L-x-TF3-T 2N60G-x-TF3-T 2N60L-x-TM3-T 2N60G-x-TM3-T 2N60L-x-TMA-T 2N60G-x-TMA-T 2N60L-x-TN3-R 2N60G-x-TN3-R 2N60L-x-T2Q-T 2N60G-x-T2Q-T 2N60L-x-T60-K 2N60G-x-T60-K Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F1 TO-220F TO-251 TO-251L TO-252 TO-262 TO-126 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube Bulk www.unisonic.com.tw Copyright (c) 2011 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-053,Ma 2N60 ABSOLUTE MAXIMUM RATINGS (TC = 25, unless otherwise specified) PARAMETER SYMBOL 2N60-A 2N60-B Power MOSFET RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS 30 V Avalanche Current (Note 2) IAR 2.0 A Continuous ID 2.0 A Drain Current 8.0 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 140 mJ Avalanche Energy Repetitive (Note 2) EAR 4.5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 54 W TO-220F/TO-220F1 23 W PD Power Dissipation TO-251/TO-251L/TO-252 (T = 25) 44 W C TO-262 54 W 40 W TO-126 Junction Temperature TJ +150 Ambient Operating Temperature TOPR -55 ~ +150 Storage Temperature TSTG -55 ~ +150 Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=64mH, IAS=2.0A, VDD=50V, RG=25 , Starting TJ = 25C 4. ISD2.4A, di/dt200A/s, VDD BVDSS, Starting TJ = 25C THERMAL DATA PACKAGE TO-220 TO-220F/TO-220F1 Junction to Ambient TO-251/TO-251L/TO-252 TO-262 TO-126 TO-220 TO-220F/TO-220F1 Junction to Case TO-251/TO-251L/TO-252 TO-262 TO-126 PARAMETER SYMBOL RATINGS 62.5 62.5 100 62.5 89 2.32 5.5 2.87 2.32 3.12 UNIT /W /W /W /W /W /W /W /W /W /W JA Jc UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 6 QW-R502-053,Ma 2N60 ELECTRICAL CHARACTERISTICS (TJ =25, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Forward Reverse 2N60-A 2N60-B SYMBOL BVDSS IDSS TEST CONDITIONS VGS = 0V, ID = 250A Power MOSFET MIN TYP MAX UNIT 600 650 10 100 -100 0.4 2.0 3.8 270 40 5 10 25 20 25 9.0 1.6 4.3 4.0 5 350 50 7 30 60 50 60 11 V V A nA nA V/ V pF pF pF ns ns ns ns nC nC nC V A A ns C Breakdown Voltage Temperature Coefficient VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V IGSS VGS = -30V, VDS = 0V ID = 250 A, Referenced to BVDSS/TJ 25C VDS = VGS, ID = 250A VGS = 10V, ID =1A ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) Static Drain-Source On-State Resistance RDS(ON) DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD (ON) Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG Gate-Source Charge QGS Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS Drain-Source Diode Forward Voltage VSD Continuous Drain-Source Current ISD Pulsed Drain-Source Current ISM Reverse Recovery Time tRR Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width 300s, Duty cycle2% 2. Essentially independent of operating temperature VDS =25V, VGS =0V,f =1MHz VDD =300V, ID =2.4A, RG=25 (Note 1, 2) VDS=480V, VGS=10V, ID=2.4A (Note 1, 2) VGS = 0 V, ISD = 2.0 A 1.4 2.0 8.0 180 0.72 VGS = 0 V, ISD = 2.4A, di/dt = 100 A/s (Note1) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-053,Ma 2N60 TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS + L Power MOSFET RG Driver VGS Same Type as D.U.T. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period P.W. D= P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) IRM Body Diode Reverse Current di/dt Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-053,Ma 2N60 TEST CIRCUITS AND WAVEFORMS (Cont.) Power MOSFET VDS 90% VGS 10% tD(ON) tR tD(OFF) tF Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms VGS QG 10V QGS QGD Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform BVDSS IAS ID(t) VDD VDS(t) tp Time Fig. 4A Unclamped Inductive Switching Test Circuit Fig. 4B Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 6 QW-R502-053,Ma 2N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-053,Ma |
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